IR2110 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Fabricante
IR2110 Datasheet PDF : 18 Pages
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Data Sheet No. PD60147 rev.U
IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF
HIGH AND LOW SIDE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
Product Summary
VOFFSET (IR2110) 500V max.
(IR2113) 600V max.
IO+/-
2A / 2A
VOUT
10 - 20V
ton/off (typ.)
120 & 94 ns
Delay Matching (IR2110) 10 ns max.
(IR2113) 20ns max.
Packages
Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and
IGBT drivers with independent high and low side referenced output chan-
nels. Proprietary HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output
14-Lead PDIP
IR2110/IR2113
16-Lead SOIC
IR2110S/IR2113S
drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates up to 500 or 600 volts.
Typical Connection
up to 500V or 600V
HO
VDD
VDD
VB
HIN
HIN
VS
SD
SD
LIN
LIN
VCC
VSS
VSS
COM
VCC
LO
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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