Q67000-A9101 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
Q67000-A9101 Datasheet PDF : 12 Pages
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TLE 4203
Characteristics
VS = 8 to 18 V, Tj = – 25 to 125 °C (typ. VS = 12 V; Tj = 25 °C)
Parameter
Symbol Limit Values Unit Test Condition
min. typ. max.
General Characteristics
Quiescent current
Iq
Quiescent current
Iq
–
70 100 mA VI1 = VI2 > VIH
–
180 230 mA VI1 = VI2 < VIL
Logic
Control inputs
H-input voltage
L-input voltage
Hysteresis of
input voltage
H-input current
L-input current
VIH
2.8 – –
V–
VIL
– – 1.2 V –
∆VI
– 0.7 –
V–
IIH
– – 10 µA VI = 5 V
– IIL
– – 10 µA VI = 0.5 V
VS = 8 to 18 V, TC = – 25 to 125 °C
Switching Stages
Saturation voltages
to + VS
to + VS
to + VS
to ground
to ground
to ground
VQSato
–
VQSato
–
VQSato
–
VQSatu
–
VQSatu
–
VQSatu
–
1.1 1.3 V
1.5 1.8 V
2.5 3.5 V
0.3 0.6 V
0.6 1
V
1.6 3.2 V
VI 1, 2 > VIH; IQ = – 1 A 1)
VI 1, 2 > VIH; IQ = – 2 A 1)
VI 1, 2 > VIH; IQ = – 4 A 1)
VI 1, 2 < VIL; IQ = 1 A
VI 1, 2 < VIL; IQ = 2 A
VI 1, 2 < VIL; IQ = 4 A
Forward Voltages
Diode to + VS
Diode to + VS
Diode of + VS
Diode to ground
Diode to ground
Diode to ground
– VQFo –
– VQFo –
– VQFo –
– VQFu –
– VQFu –
– VQFu –
0.95 1.3 V
1.05 1.5 V
1.30 1.8 V
0.95 1.3 V
1 1.5 V
1.20 1.8 V
VI 1/ 2 > VIH; IQ = 1 A 1)
VI 1/ 2 > VIH; IQ = 2 A 1)
VI 1/ 2 > VIH; IQ = 4 A 1)
VI 1/ 2 < VIL; IQ = – 1 A
VI 1/ 2 < VIL; IQ = – 2 A
VI 1/ 2 < VIL; IQ = – 4 A
1) measured to + VS
Semiconductor Group
7
1998-02-01
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