DS1109SG46 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DS1109SG46

Rectifier Diode

Dynex Semiconductor 

DS1109SG

CHARACTERISTICS

Symbol

Parameter

VFM

Forward voltage

IRM

Peak reverse current

QS

Total stored charge

Irr

Reverse recovery current

V

Threshold voltage

TO

r

Slope resistance

T

Conditions

At 1800A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

I

F

=

1000A,

dI /dt

RR

=

3A/µs

Tcase = 150˚C, VR = 100V

At T = 150˚C

vj

At T = 150˚C

vj

Min. Max. Units

-

1.8

V

-

50 mA

- 2600 µC

-

80

A

-

0.88 V

- 0.687 mΩ

CURVES

2500

Measured under pulse

conditions

2000

1500

1000

Tj = 25˚C

Tj = 150˚C

2500

2000

dc

Half wave

3 phase

1500

6 phase

1000

500

500

0

0

0.5

1.0

1.5

2.0

2.5

0

Instantaneous forward voltage, VF - (V)

Fig.2 Maximum (limit) forward characteristics

500

1000

1500

Mean forward current, IF(AV) - (A)

Fig.3 Dissipation curves

2000

VFM Equation:-

VFM = A + Bln (IF) + C.IF+D.√IF

Where

A = 0.788646

B = –0.0045

C = 0.000592

D = 0.006984

these values are valid for Tj = 125˚C for IF 500A to 2500A

4/7

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