DCR1576SY42 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR1576SY42 Datasheet PDF : 9 Pages
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DCR1576SY
100000
Conditions:
Tj = 125˚C, VR = 1600V,
IT = 2000A
Snubber 1µF, 11 Ohms
10000
1000
Max. IRR
Min. IRR
Max. QS
100
Min. QS
1000
10
IT
100
0.1
QS
tp = 2ms
dI/dt
IRM 1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
100
Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs
100
200
500
1ms
10ms
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 - -
10
50W
20W
10W
5W
2W
Tj = 125˚C
1
Upper
Limit 99%
Lower Limit
1%
Tj
=
Tj =
25˚C
-40˚C
0.1
0.001
0.01
0.1
1.0
10
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
0.1
0.1000
Single side cooled
Single side cooled
0.01
0.0100
Double side cooled
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
half wave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case - ˚C/W
Double
Single
sided
sided
0.0095
0.019
0.0105
0.020
0.0112
0.0207
0.0139
0.0234
0.1
1.0
10
100
Time - (s)
Fig.6 Transient thermal impedance - junction to case
0.0010
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective Thermal Resistance
Junction to heatsink - ˚C/W
Double
Sided
Single
Sided
0.0115
0.0125
0.0132
0.0159
0.0230
0.0240
0.0247
0.0274
0.1
1.0
10
100
Time - (s)
Fig.7 Transient thermal impedance - junction to heatsink
6/9
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