DCR1576SY48 Ver la hoja de datos (PDF) - Dynex Semiconductor

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DCR1576SY48

Phase Control Thyristor

Dynex Semiconductor 

DCR1576SY

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

I /I

RRM DRM

dV/dt

dI/dt

VT(TO)

r

T

tgd

IL

IH

t

q

Peak reverse and off-state current

At V /V , T = 125oC

-

RRM DRM case

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC.

-

Rate of rise of on-state current

From 67% VDRM to 2x IT(AV) Repetitive 50Hz -

Gate source 20V, 20Ω

tr < 0.5µs.

Non-repetitive -

Threshold voltage

At Tvj = 125oC

-

On-state slope resistance

Delay time

Latching current

At T = 125oC

-

vj

VD = 67% VDRM, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

-

Tj = 25oC, VD = 5V

550

Holding current

Tj = 25oC, Rg - k = ∞

150

Turn-off time

IT = 800A, tp = 1ms, Tj = 125˚C,

VRM = 50V, dIRR/dt = 20A/µs,

1.0

VDR = 67% VDRM, dVDR/dt = 20V/µs linear

300 mA

1000 V/µs

150 A/µs

300 A/µs

1.05 V

0.34 mΩ

2.5

µs

1000 mA

300 mA

-

ms

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Conditions

VGT

IGT

VGD

VFGM

V

FGN

VRGM

IFGM

PGM

P

G(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, fig.4

Max. Units

3.0

V

300 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/9

www.dynexsemi.com

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