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IMX2

NPN GENERAL PURPOSE DUAL TRANSISTOR

Unisonic Technologies 

IMX2

DUAL TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA=25°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

7

V

Collector Current

IC

150

mA

Collector Power Dissipation

Junction Temperature

Storage Temperature

PC

TJ

TSTG

300 (Note1)

mW

150

°C

-55~+150

°C

Note: 1. 200mW per element must not be exceeded.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA=25°C)

PARAMETER

SYMBOL

Collector-Base Breakdown Voltage

BVCBO

Collector-Emitter Breakdown Voltage BVCEO

Emitter-Base Breakdown Voltage

BVEBO

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector-Emitter Saturation Voltage VCE(SAT)

DC Current Transfer Ratio

hFE

Transition Frequency (Note)

fT

Output Capacitance

COB

Note: Transition frequency of the device.

TEST CONDITIONS

IC= 50µA

IC= 1mA

IE= 50µA

VCB= 60V

VEB= 7V

IC / IB = 50mA/5mA

VCE= 6V, IC= 1mA

VCE=12V, IE=-2mA, f=100MHz

VCB= 12V, IE=0A, f=1KHz

MIN TYP MAX UNIT

60

V

50

V

7

V

0.1 µA

0.1 µA

0.4

V

120

560

180

MHz

2 3.5 pF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R215-004.D

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