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DCR1279SD48 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
DCR1279SD48
Dynex
Dynex Semiconductor Dynex
DCR1279SD48 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
DCR1279SD
10000 Conditions:
Tj = 125˚C
QS is total integral stored charge
IT = 1000A
1000
100
0.1
IT
QS
tp
dI/dt
IRM
1.0
10
100
Rate of decay of on-state current dI/dt - (A/µs)
Fig.3 Stored charge
100
VFGM
10
Table gives pulse power PGM in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 -
-
100W
50W
20W
10W
5W
2W
Tj = 25˚C
Upper limit 99%
Tj = 125˚C
Tj = -40˚C
1
Lower limit 1%
0.1
0.001
0.01
0.1
1
10
Gate trigger current IGT - (A)
IFGM
Fig.4 Gate characteristics
6/9

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