DCR1279SD46 Ver la hoja de datos (PDF) - Dynex Semiconductor

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DCR1279SD46

4700V phase control thyristor

Dynex Semiconductor 

DCR1279SD

CURRENT RATINGS

T = 80˚C unless stated otherwise.

case

Symbol

Parameter

Double Side Cooled

IT(AV)

Mean on-state current

IT(RMS)

RMS value

IT

Continuous (direct) on-state current

Single Side Cooled (Anode side)

IT(AV)

IT(RMS)

IT

Mean on-state current

RMS value

Continuous (direct) on-state current

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

I

Surge (non-repetitive) on-state current

TSM

I2t

I2t for fusing

Conditions

Half wave resistive load,

-

-

Half wave resistive load

-

-

Conditions

10ms half sine; Tcase = 125oC

V = 50% V - 1/4 sine

R

RRM

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

860

A

1350

A

1055

A

590

A

930

A

860

A

Max. Units

12.0

kA

0.72 x 106 A2s

15.0

kA

1.12 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

T

Virtual junction temperature

vj

T

Storage temperature range

stg

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 22.0kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.020 oC/W

- 0.036 oC/W

- 0.044 oC/W

- 0.004 oC/W

-

0.008 oC/W

-

135

oC

-

125

oC

-55 125

oC

22.0 24.0 kN

2/9

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