K06T60(2013) Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción

Fabricante

K06T60
(Rev.:2013)

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

Infineon Technologies 

TRENCHSTOP™ Series

IKA06N60T

0,6 mJ

*) Eon and Ets include losses

due to diode recovery

0,5 mJ

Ets*

0,4 mJ

0,3 mJ

0,2 mJ

0,1 mJ

Eoff

Eon*

0,0 mJ 0A 2A 4A 6A 8A 10A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=175°C,

VCE=400V, VGE=0/15V, rG=23Ω,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

due to diode recovery

Ets*

0,4 mJ

0,3 mJ

Eon*

0,2 mJ

Eoff

0,1 mJ

0,0 mJ









RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=175°C,

VCE = 400V, VGE = 0/15V, IC = 6A,

Dynamic test circuit in Figure E)

0,4mJ

*) Eon and Ets include losses

due to diode recovery

0,3mJ

Ets*

0,2mJ

E off

0,1mJ

E on*

0,0mJ

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=400V,

VGE = 0/15V, IC = 6A, rG = 23Ω,

Dynamic test circuit in Figure E)

0 ,5m J

*) Eon and Ets include losses

due to diode recovery

E ts*

0 ,4m J

0 ,3m J

0 ,2m J

0 ,1m J

E off

Eon*

0 ,0m J

200V

300V

400V

500V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 6A, rG = 23Ω,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

7

Rev. 2.5 20.09.2013

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