G50H603 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

G50H603

600V high speed switching series third generation

Infineon Technologies 

IGW50N60H3

Highspeedswitchingseriesthirdgeneration

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Parameter

Symbol Conditions

DynamicCharacteristic

Input capacitance

Cies

Output capacitance

Coes

Reverse transfer capacitance

Cres

Gate charge

QG

Internal emitter inductance

measured 5mm (0.197 in.) from LE

case

Short circuit collector current

Max. 1000 short circuits

IC(SC)

Time between short circuits: ≥ 1.0s

VCE=25V,VGE=0V,f=1MHz

VCC=480V,IC=50.0A,

VGE=15V

VGE=15.0V,VCC≤400V,

tSC≤5µs

Tvj=150°C

Value

Unit

min. typ. max.

- 2960 -

- 116 - pF

-

96

-

- 315.0 - nC

- 13.0 - nH

-

-A

330

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=25°C,

VCC=400V,IC=50.0A,

VGE=0.0/15.0V,

rG=7.0Ω,Lσ=90nH,

Cσ=60pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode (IKW50N60H3) reverse

recovery.

Value

Unit

min. typ. max.

-

23

- ns

-

37

- ns

- 235 - ns

-

24

- ns

- 1.45 - mJ

- 0.91 - mJ

- 2.36 - mJ

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=175°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=175°C,

VCC=400V,IC=50.0A,

VGE=0.0/15.0V,

rG=7.0Ω,Lσ=90nH,

Cσ=60pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode (IKW50N60H3) reverse

recovery.

Value

Unit

min. typ. max.

-

23

- ns

-

31

- ns

- 273 - ns

-

24

- ns

- 1.42 - mJ

- 1.13 - mJ

- 2.55 - mJ

5

Rev.2.2,2014-03-12

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