2N6253(2012) Ver la hoja de datos (PDF) - Comset Semiconductors

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componentes Descripción

Fabricante

2N6253
(Rev.:2012)

HIGH POWER SILICON NPN TRANSISTORS

Comset Semiconductors 

NPN 2N6253 – 2N6254 – 2N6371

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

2N6253 45 -

VCEO(SUS)

Collector-Emitter Sustaining IC=0.2 A, IB=0 A

Voltage (*)

2N6254 80

-

2N6371 40 -

Collector-Emitter Sustaining

2N6253 55 -

VCER(SUS) Voltage (*)

RBE=100Ω

IC=0.2 mA

2N6254 85 -

2N6371 45 -

VCEV(SUS) Base-Emitter Voltage (*)

IC=0.1 A

VBE=-1.5 V

2N6253 55 -

2N6254 90 -

2N6371 50 -

VCE=4 V, IC=3 A 2N6253 -

-

VBE

Base-Emitter Voltage (*)

VCE=2 V, IC=5 A 2N6254 -

-

VCE=4 V, IC=16 A 2N6371 -

-

VCE=4 V, IC=3 A

VCE=4 V, IC=15 A

2N6253

20

3

-

-

hFE

Static Forward Current

transfer ratio (*)

VCE=2 V, IC=5 A

VCE=4 V, IC=15 A

2N6254

20

5

-

-

VCE=4 V, IC=8 A

VCE=4 V, IC=16 A

2N6371

15

4

-

-

hfe

Small Signal Current Gain

VCE=4 V, IC=1 A

f=1 kHz

2N6253

2N6254 10

2N6371

-

2N6253 -

-

fT

Transition Frequency

VCE=4 V, IC=1 A 2N6254 -

-

2N6371 800 -

Second Breakdown

VCE=45 V

2N6253 2.55 -

Is/b

Collector Current

tp=1s, non rep.

VCE=40 V

2N6254 1.87 -

2N6371 2.9 -

-

-

V

-

-

-

V

-

-

-

V

-

1.7

1.5 V

4

70

-

70

-

-

60

-

-

-

-

- kHz

-

-

-

A

-

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

09/11/2012

COMSET SEMICONDUCTORS

3|4

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