2N6253(2012) Ver la hoja de datos (PDF) - Comset Semiconductors
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2N6253 Datasheet PDF : 4 Pages
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NPN 2N6253 – 2N6254 – 2N6371
HIGH POWER SILICON NPN TRANSISTORS
The 2N6253, 2N6254, and 2N6371 are silicon transistors are mounted in TO-3 metal
package.
Tey are intended for a wide variety of high-power applications. The construction of these
devices renders them highly resistant to second breakdown over a wide range of operating
conditions.
These devices differ in maximum ratings for voltage and power dissipation.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO(SUS) Collector-Emitter Voltage
VCBO
Collector-Base Voltage (*)
VCER(SUS)
Collector-Emitter Voltage
RBE=100Ω
VCEV(SUS)
Collector-Emitter Voltage
VBE=-1.5V
VEBO
IC
IB
PTOT
TJ
TS
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
< 25°C
> 25°C
Value
Unit
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
2N6253
2N6254
2N6371
45
80
V
40
55
100
V
50
55
85
V
45
55
90
V
50
5
7
V
5
15
A
7
A
115
150
Watts
117
Derate Linearly to 200°C
-65 to +200
°C
09/11/2012
COMSET SEMICONDUCTORS
1|4
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