DGT408BRP Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DGT408BRP Datasheet PDF : 6 Pages
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CHARACTERISTICS
Tj = 115oC unless stated otherwise
Symbol
Parameter
VTM
IDM
IRRM
VGT
I
GT
I
RGM
EON
td
tr
E
OFF
t
gs
tgf
tgq
QGQ
QGQT
IGQM
On-state voltage
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Reverse gate cathode current
Turn-on energy
Delay time
Rise time
Turn-off energy
Storage time
Fall time
Gate controlled turn-off time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
DGT408BRP
Conditions
At 800A peak, IG(ON) = 4A d.c.
VDRM = 4500V, VRG = 0V
At VRRM
VD = 24V, IT = 100A, Tj = 25oC
V = 24V, I = 100A, T = 25oC
D
T
j
V = 16V, No gate/cathode resistor
RGM
VD = 3000V
IT = 800A, dIT/dt = 300A/µs
IFG = 30A, rise time < 1.5µs
IT = 800A, VDM = 3000V
Snubber Cap Cs = 2.0µF,
di /dt
GQ
=
30A/µs
Min. Max. Units
-
4.7
V
-
50 mA
-
50 mA
-
1.0
V
-
1.5
A
-
50 mA
- 1200 mJ
-
1.5
µs
-
5.0
µs
- 3000 mJ
-
15.0 µs
-
1.5
µs
-
15.5 µs
-
-
µC
-
-
µC
-
850
A
3/6
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