DGT408BRP4540 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DGT408BRP4540

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

DGT408BRP

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

diT/dt Critical rate of rise of on-state current

dV /dt Rate of rise of off-state voltage

D

LS

Peak stray inductance in snubber circuit

Conditions

10ms half sine. T = 115oC

j

10ms half sine. Tj =115oC

VD = 3000V, IT = 800A, Tj = 115oC, IFG > 30A,

Rise time > 1.5µs

To 66% VDRM; RGK ≤ 1.5Ω, Tj = 115oC

To 66% VDRM; VRG = -2V, Tj = 115oC

-

Max. Units

6.0

kA

0.18 x 106 A2s

300

A/µs

-

1000

V/µs

V/µs

200

nH

GATE RATINGS

Symbol

Parameter

V

RGM

IFGM

P

FG(AV)

PRGM

diGQ/dt

tON(min)

tOFF(min)

Peak reverse gate voltage

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time

Minimum permissable off time

Conditions

This value maybe exceeded during turn-off

Min. Max. Units

-

16

V

20

70

A

-

10

W

-

15 kW

15

60 A/µs

20

-

µs

100

-

µs

THERMAL RATINGS AND MECHANICAL DATA

Symbol

Parameter

Conditions

Double side cooled

R

th(j-hs)

R

th(c-hs)

Tvj

TOP/Tstg

-

DC thermal resistance - junction to heatsink Anode side cooled

surface

Cathode side cooled

Contact thermal resistance

Clamping force 12.0kN

With mounting compound

Virtual junction temperature

Operating junction/storage temperature range

Clamping force

per contact

Min. Max. Units

- 0.041 oC/W

-

0.07 oC/W

-

0.1 oC/W

- 0.009 oC/W

-

125

oC

-40

125

oC

11.0 15.0 kN

2/6

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