IDT70V659S(2008) Ver la hoja de datos (PDF) - Integrated Device Technology

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IDT70V659S
(Rev.:2008)

HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT70V659/58/57S

High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM

Industrial and Commercial Temperature Ranges

Recommended DC Operating

Conditions with VDDQ at 2.5V

Recommended DC Operating

Conditions with VDDQ at 3.3V

Symbol

Parameter

Min. Typ.

Max.

Unit

Symbol

Parameter

Min. Typ.

Max.

Unit

VDD Core Supply Voltage

3.15 3.3

3.45

VDDQ I/O Supply Voltage(3)

2.4 2.5

2.6

V

VDD Core Supply Voltage

V

VDDQ I/O Supply Voltage(3)

3.15 3.3

3.45

V

3.15 3.3

3.45

V

VSS Ground

00

0

V

VIH Input High Voltage(3)

1.7 ____ VDDQ + 100mV(2) V

(Address & Control Inputs)

VIH Input High Voltage - I/O(3) 1.7 ____ VDDQ + 100mV(2) V

VIL Input Low Voltage

-0.5(1) ____

0.7

V

NOTES:

4869 tbl 06

1. VIL > -1.5V for pulse width less than 10 ns.

2. VTERM must not exceed VDDQ + 100mV.

3. To select operation at 2.5V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VSS (0V), and VDDQX for that port must be

supplied as indicated above.

VSS Ground

00

0

V

VIH Input High Voltage

2.0 ____ VDDQ + 150mV(2) V

(Address & Control Inputs)(3)

VIH Input High Voltage - I/O(3)

2.0 ____ VDDQ + 150mV(2) V

VIL Input Low Voltage

-0.3(1) ____

0.8

V

NOTES:

4869 tbl 07

1. VIL > -1.5V for pulse width less than 10 ns.

2. VTERM must not exceed VDDQ + 150mV.

3. To select operation at 3.3V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VDD (3.3V), and VDDQX for that port must be

supplied as indicated above.

Capacitance(1)

(TA = +25°C, F = 1.0MHZ) PQFP ONLY

Symbol

Parameter

Conditions Max. Unit

CIN Input Capacitance

COUT(2) Output Capacitance

VIN = 0V

VOUT = 0V

8 pF

10.5 pF

NOTES:

4869 tbl 08

1. These parameters are determined by device characterization, but are not

production tested.

2. COUT also references CI/O.

Maximum Operating

Temperature and Supply Voltage(1)

Grade

Ambient

Temperature

GND

VDD

Commercial

0OC to +70OC

0V 3.3V + 150mV

Industrial

-40OC to +85OC

0V

3.3V + 150mV

NOTE:

4869 tbl 04

1. This is the parameter TA. This is the "instant on" case temperature.

Absolute Maximum Ratings(1)

Symbol

Rating

Commercial

& Industrial

VTERM(2)

(VDD)

TBIAS(3)

VDD Terminal Voltage

with Respect to GND

Temperature Under Bias

-0.5 to + 4.6

-55 to +125

TSTG

Storage Temperature

-65 to +150

TJN

Junction Temperature

+150

IOUT(For VDDQ = 3.3V) DC Output Current

50

IOUT(For VDDQ = 2.5V) DC Output Current

40

Unit

V

oC

oC

oC

mA

mA

4869 tbl 05

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above

those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may

affect reliability.

2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time

or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD

+ 150mV.

3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.

8

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