IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS (1) (Continued)
VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V
6116SA45
6116LA45
6116SA55(3)
6116LA55(3)
6116SA70(3)
6116LA70(3)
6116SA90(3)
6116LA90(3)
Symbol
Parameter
Power Com'l. Mil. Com'l. Mil. Com'l. Mil. Com'l. Mil.
ICC1 Operating Power Supply SA 80 90 — 90 — 90 — 90
Current, CS ≤ VIL,
Outputs Open,
LA 75 85 — 85 — 85 — 85
VCC = Max., f = 0
ICC2 Dynamic Operating
SA 100 100 — 100 — 100 — 100
Current, CS ≤ VIL,
VCC = Max.,
LA 90 95 — 90 — 90 — 85
Outputs Open, f = fMAX(4)
ISB
Standby Power Supply
SA 25 25 — 25 — 25 — 25
Current (TTL Level)
CS ≥ VIH, VCC = Max.,
LA 20 20 — 20 — 20 — 25
Outputs Open, f = fMAX(4)
ISB1 Full Standby Power
SA 2 10 — 10 — 10 — 10
Supply Current
(CMOS Level), CS ≥ VHC, LA 0.1 0.9 — 0.9 — 0.9 — 0.9
VCC = Max., VIN ≥ VHC
or VIN ≤ VLC, f = 0
NOTES:
1. All values are maximum guaranteed values.
2. 0°C to + 70°C temperature range only.
3. –55°C to + 125°C temperature range only.
4. fMAX = 1/tRC, only address inouts are toggling at fMAX, f = 0 means address inputs are not changing.
6116SA120(3)
6116LA120(3)
Com'l. Mil.
— 90
— 85
— 100
— 85
— 25
— 15
— 10
— 0.9
6116SA150(3)
6116LA150(3)
Com'l. Mil. Unit
— 90 mA
— 85
— 90 mA
— 85
— 25 mA
— 15
— 10 mA
— 0.9
3089 tbl 09
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) VLC = 0.2V, VHC = VCC – 0.2V
Symbol
VDR
ICCDR
Parameter
VCC for Data Retention
Data Retention Current
tCDR(3)
tR(3)
|ILI|
Data Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
Test Conditions
—
MIL.
CS ≥ VHC
COM'L.
VIN ≥ VHC or ≤ VLC
Min.
2.0
—
—
—
Typ.(1)
VCC
2.0V 3.0V
—
—
0.5
1.5
0.5
1.5
0
—
tRC(2)
—
—
—
—
—
Max.
VCC
2.0V 3.0V
—
—
200 300
20 30
—
—
—
—
2
2
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Unit
V
µA
ns
ns
µA
3089 tbl 10
5.1
4