IDC08S60C Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

IDC08S60C

2nd generation thinQ!™ SiC Schottky Diode

Infineon Technologies 

IDC08S60C

Maximum Ratings

Parameter

Symbol

Repetitive peak reverse voltage

DC blocking voltage

V RRM

V DC

Continuous forward current limited by

Tjmax

IF

Surge non repetitive forward current

sine halfwave

I F , SM

Repetitive peak forward current

limited by Tjmax

IF, RM

Non-repetitive peak forward current I F,max

Operating junction and storage

temperature

Tj , Tstg

Condition

TC =25° C, tP =10 ms

TC = 100° C, Tj= 1 5 0 ° C,

D=0.1

TC =25° C, tp=10µs

Value

Unit

600

V

600

8

59

A

35

264

-55...+175

°C

Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified

Parameter

Reverse current

Diode forward voltage

Symbol

Conditions

IR

VR=600V

Tj=25 °C

VF

I F= 8 A

Tj=25 °C

Value

Unit

min. Typ. max.

1

100

µA

1.5

1.7

V

Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component

Parameter

Symbol

Conditions

Value

Unit

min. Typ. max.

Total capacitive charge QC

Switching time 1)

tc

IF <=I F,max

di/dt=200A/µs

VR=400V

Tj = 150 °C

Tj = 150 °C

19

nC

<10

ns

VR= 1V

Total capacitance

C

f=1MHz

VR=30 0V

310

50

pF

VR= 600V

50

1) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and

di/dt), different from trr which is dependent on Tj, ILOAD and di/dt. No reverse recovery time constant trr due to

absence of minority carrier injection

Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006

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