IDC08S60C Ver la hoja de datos (PDF) - Infineon Technologies
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IDC08S60C Datasheet PDF : 4 Pages
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2nd generation thinQ!TM SiC Schottky Diode
IDC08S60C
FEATURES:
Applications:
A
• Revolutionary semiconductor material -
• SMPS, PFC, snubber
Silicon Carbide
• Switching behavior benchmark
C
• No reverse recovery
• No temperature influence on the switching
behavior
• No forward recovery
• High surge current capability
Chip Type
IDC08S60C
VBR IF
Die Size
600V 8A 1.658 x 1.52 mm2
Package
sawn on foil
MECHANICAL PARAMETER:
Raster size
Anode pad size
Area total / active
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metalization
Cathode metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1.658x 1.52
1.421 x 1.283
2.52 / 1.95
mm
mm2
355
µm
75
mm
0
deg
1443 pcs
Photoimide
3200 nm Al
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, ≤ 350µm
∅ ≥ 0.3 mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, AIM PMD D CID CLS, Edition 1, 27.04.2006
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