DSZ412SE Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DSZ412SE

Avalanche Diode

Dynex Semiconductor 

DSZ412SE

SURGE RATINGS

Symbol

Parameter

IFRM

Repetitive peak forward current

I2t

I2t for fusing

IFSM

PRSM

Surge (non-repetitive) forward current

Non-repetitive peak avalanche power

Conditions

Half sine φ = 30˚; THeatsink = 55oC

10ms; Tj = 150oC

3ms; Tj = 150oC

With 50% V , T =150˚C

RRM j

10µs

avalanche,

T

j

=

150˚C

Max.

1990

11250

7250

1500

10

Units

A

A2s

A2s

A

kW

THERMAL RATINGS AND MECHANICAL DATA

Symbol

Parameter

Conditions

R

th(j-h)

Thermal resistance - junction to heatsink

Double side cooled

Clamping force 3.0kN

with mounting compound

dc

Half-wave

3 phase

Rth(j-h)

Tvj

Thermal resistance - junction to heatsink

Single side cooled

Clamping force 3.0kN

with mounting compound

Virtual junction temperature

Forward (conducting)

Reverse (blocking)

dc

Half-wave

3 phase

Tstg

Storage temperature range

f

Frequency

-

Clamping force

Min. Max. Units

- 0.115 oC/W

- 0.129 oC/W

- 0.150 oC/W

- 0.270 oC/W

- 0.284 oC/W

- 0.305 oC/W

-

165

oC

-

150

oC

–55 150

oC

10 400 Hz

2.5 3.8 kN

3/9

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