HYS72V64220GU-8-C2 Ver la hoja de datos (PDF) - Infineon Technologies
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Fabricante
HYS72V64220GU-8-C2
Infineon Technologies
HYS72V64220GU-8-C2 Datasheet PDF : 15 Pages
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HYS 64/72V64220GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT – 1.0
4.6
Power supply voltage on VDD
VDD
– 1.0
4.6
Storage temperature range
TSTG
-55
+150
Power dissipation per SDRAM component
PD
–
1
Data out current (short circuit)
IOS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
oC
W
mA
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (IOUT = – 4.0 mA)
Output Low Voltage (IOUT = 4.0 mA)
Input Leakage Current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < VOUT < VDD)
Symbol
Limit Values
min.
max.
VIH
2.0
VIL
– 0.5
VOH
2.4
VOL
–
II(L)
– 40
VDD + 0.3
0.8
–
0.4
40
Unit
V
V
V
V
µA
IO(L)
– 40
40
µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input Capacitance
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input Capacitance (CS0 - CS3)
Input Capacitance (CLK0 - CLK3)
Input Capacitance (CKE0, CKE1)
Input Capacitance (DQMB0 - DQMB7)
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7)
Input Capacitance (SCL, SA0-2)
Input/Output Capacitance
Symbol
CI1
Limit Values
max.
max.
64M × 64 64M × 72
105
144
Unit
pF
CI2
32
40
pF
CICL
40
43
pF
CI3
65
72
pF
CI4
20
25
pF
CIO
17
17
pF
CSC
8
8
pF
CSD
8
8
pF
INFINEON Technologies
5
9.01
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