HYS64V64220GBDL Ver la hoja de datos (PDF) - Infineon Technologies
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Fabricante
HYS64V64220GBDL Datasheet PDF : 13 Pages
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HYS64V64220GBDL-7/7.5/8-D
144 pin SO-DIMM SDRAM Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to VSS
VIN, VOUT – 1.0
4.6
Power supply voltage on VDD
VDD
– 1.0
4.6
Storage temperature range
TSTG
-55
+125
Power dissipation
PD
–
16
Data out current (short circuit)
IOS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
oC
W
mA
DC Characteristics
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (IOUT = – 4.0 mA)
Output low voltage (IOUT = 4.0 mA)
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V < VOUT < VDD)
Symbol
VIH
VIL
VOH
VOL
II(L)
IO(L)
Limit Values
Unit
min.
max.
2.0
VDD+0.3 V
– 0.5
0.8
V
2.4
–
V
–
0.4
V
– 20
20
µA
– 20
20
µA
Capacitance
TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Input capacitance (A0 to A11, BA0, BA1)
CI1
Input capacitance (RAS, CAS, WE)
CI2
Input Capacitance (CLK0, CLK1)
CI3
Input capacitance (CS0, CS1)
CI4
Input capacitance (DQMB0-DQMB7)
CI5
Input capacitance (CKE0, CKE1)
CI6
Input / Output capacitance (DQ0-DQ63)
CIO
Input Capacitance (SCL,SA0-2)
Csc
Input/Output Capacitance (SDA)
Csd
Limit Unit
Values
64M x 64
max.
85
pF
85
pF
70
pF
60
pF
15
pF
50
pF
18
pF
8
pF
10
pF
Infineon Technologies
5
2002-08-06
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