HVL145 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HVL145

Silicon Epitaxial Planar Pin Diode for Antenna Switching

Renesas Electronics 

HVL145

Absolute Maximum Ratings

Item

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

VR

IF

Pd

Tj

Tstg

Symbol

Value

60

50

100

125

−55 to +125

(Ta = 25°C)

Unit

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse current

IR

Forward voltage

VF

Capacitance

C

Forward resistance

rf

ESD-Capability *1

—

—

—

100

nA VR = 60 V

—

—

0.9

V

IF = 2 mA

—

—

0.45

pF VR = 1 V, f = 1 MHz

—

—

1.8

Ω

IF = 10 mA, f = 100 MHz

100

—

—

V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse.

Notes: 1. Failure criterion; IR > 100 nA at VR = 60 V

2. Please do not use the soldering iron due to avoid high stress to the EFP package.

3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is considered as

unquestioned. Please kindly consider soldering nature.

Rev.1.00, Dec 07, 2004, page 2 of 5

Share Link: