HUFA75344S3ST Ver la hoja de datos (PDF) - Fairchild Semiconductor
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HUFA75344S3ST Datasheet PDF : 10 Pages
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HUFA75344G3, HUFA75344P3, HUFA75344S3S
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
55
55
±20
75
Figure 4
Figure 6
285
1.90
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
SYMBOL
BVDSS
IDSS
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
IGSS
VGS(TH)
rDS(ON)
RθJC
RθJA
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
tON
td(ON)
tr
td(OFF)
tf
tOFF
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
CAPACITANCE SPECIFICATIONS
Qg(TOT)
Qg(10)
Qg(TH)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
TEST CONDITIONS
ID = 250µA, VGS = 0V (Figure 11)
VDS = 50V, VGS = 0V
VDS = 45V, VGS = 0V, TC = 150oC
VGS = ±20V
VGS = VDS, ID = 250µA (Figure 10)
ID = 75A, VGS = 10V (Figure 9)
(Figure 3)
TO-247
TO-220, TO-263, TO-262
VDD = 30V, ID ≅ 75A,
RL = 0.4Ω, VGS = 10V,
RGS = 3.0Ω
VGS = 0V to 20V
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V,
ID ≅ 75A,
RL = 0.4Ω
Ig(REF) = 1.0mA
(Figure 13)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
55
-
-
V
-
-
1
µA
-
-
250
µA
-
-
±100
nA
2
-
4
V
-
6.5
8.0
mΩ
-
-
0.52 oC/W
-
-
30
oC/W
-
-
62
oC/W
-
-
187
ns
-
13
-
ns
-
125
-
ns
-
46
-
ns
-
57
-
ns
-
-
147
ns
-
175
210
nC
-
90
108
nC
-
5.9
7.0
nC
-
14
-
nC
-
39
-
nC
-
3200
-
pF
-
1170
-
pF
-
310
-
pF
©2004 Fairchild Semiconductor Corporation
HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Rev. B3
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