HSSR-8060 Ver la hoja de datos (PDF) - HP => Agilent Technologies
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HSSR-8060 Datasheet PDF : 13 Pages
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Insulation and Safety Related Specifications
Parameter
Symbol Value Units
Conditions
Min. External Air Gap
(External Clearance)
L(IO1) 7.0 mm Measured from input terminals to output
terminals, shortest distance through air
Min. External Tracking Path
(External Creepage)
L(IO2) 8.5 mm Measured from input terminals to output
terminals, shortest distance path along body
Min. Internal Plastic Gap
(Internal Clearance)
0.5 mm Through insulation distance, conductor to
conductor, usually the direct distance
between the photoemitter and photodetector
inside the optocoupler cavity
Tracking Resistance
CTI 200 V DIN IEC 112/VDE 0303 PART 1
(Comparative Tracking Index)
Isolation Group
IIIa
Material Group (DIN VDE 0110, 1/89, Table 1)
Option 300 – surface mount classification is Class A in accordance with CECC 00802.
Absolute Maximum Ratings
Storage Temperature ................................................... -55°C to+125°C
Operating Temperature - TA .......................................... -40°C to +85°C
Case Temperature - TC .......................................................... +105°C[1]
Average Input Current - IF ............................................................ 20 mA
Repetitive Peak Input Current - IF ............................................... 40 mA
(Pulse Width ≤ 1 ms; duty cycle ≤ 50%)
Transient Peak Input Current - IF ............................................... 100 mA
(Pulse Width ≤ 200 µs; duty cycle ≤ 1%)
Reverse Input Voltage - VR ................................................................ 3 V
Input Power Dissipation .............................................................. 40 mW
Output Voltage (TA = 25°C)
Connection A - VO ......................................................... - 60 to +60 V
Connection B - VO ............................................................. 0 to +60 V
Average Output Current - Figure 3 (TA = 25°C, TC ≤ 70°C)
Connection A - IO ..................................................................... 0.75 A
Connection B - IO ..................................................................... 1.50 A
Single Shot Peak Output Current
(100 ms pulse width, TA = 25°C, IF = 10 mA)
Connection A - IO .................................................................... 3.75 A
Connection B - IO ...................................................................... 7.0 A
Output Power Dissipation ..................................................... 750 mW[2]
Lead Solder Temperature .... 260°C for 10 S (1.6 mm below seating plane)
Infrared and Vapor Phase Reflow Temperature
(Option #300) ......................................... See Fig. 1, Thermal Profile
Thermal Resistance
Typical Output MOSFET Junction
to Case – θJC = 55°C/W
Demonstrated ESD
Performance
Human Body Model: MIL-STD-
883 Method 3015.7 - 16 kV
Machine Model: EIAJ 1988.3.28
Version 2), Test Method 20,
Condition C – 1200 V
Surge Withstand
Capability
IEEE STD 472-1974
1-445
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