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SBM1040CT Ver la hoja de datos (PDF) - Diodes Incorporated.

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componentes Descripción
Fabricante
SBM1040CT Datasheet PDF : 4 Pages
1 2 3 4
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Symbol
Min
V(BR)R
40
¾
Per Element
VF
¾
¾
¾
¾
Per Element
IR
¾
¾
¾
Per Element
CT
¾
Notes: 2. Short duration test pulse used to minimize self-heating effect.
Typ Max Unit
Test Condition
¾
¾
V IR = 500mA
0.45 0.48
0.39 0.42
0.53 0.575
0.50 0.55
IF = 5A, Tj = 25°C
V
IF = 5A, Tj = 100°C
IF = 10A, Tj = 25°C
IF = 10A, Tj = 100°C
35
150 mA VR = 35V, Tj = 25°C
4
10 mA VR = 35V, Tj = 100°C
10
80
mA VR = 17.5V, Tj = 25°C
2
5
mA VR = 17.5V, Tj = 100°C
375
¾
pF f = 1.0MHz, VR = 4.0V DC
100
10
1 Tj = +100°C
Tj = +125°C
E 0.1
T 0.01
Tj = -25°C
E 0.001
Tj = +25°C
0.0001
L 0
100 200 300 400 500 600
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics, Per Element
O 50
Single Half-Sine-Wave
TC = 115°C
Total Device
S 40
30
OB 20
100
10
Tj = +125°C
1
Tj = +100°C
0.1
0.01
Tj = +25°C
0.001
05
10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics, Per Element
10,000
f = 1MHz
1000
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
0
NOT RECOMMENDED
FOR NEW DESIGNS
USE PDS1040CTL
5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance
vs. Reverse Voltage, Per Element
DS30356 Rev. 7 - 4
2 of 4
www.diodes.com
SBM1040CT

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