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HN58V256AT-12

256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58V257A)

Renesas Electronics 

HN58V256A Series

HN58V257A Series

256k EEPROM (32-kword × 8-bit)

Ready/Busy and RES function (HN58V257A)

REJ03C0147-0500Z

(Previous ADE-203-357D (Z) Rev.4.0)

Rev. 5.00

Nov. 17. 2003

Description

Renesas Technology's HN58V256A and HN58V257A are electrically erasable and programmable ROMs

organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability

by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also

have a 64-byte page programming function to make their write operations faster.

Features

• Single 3 V supply: 2.7 to 5.5 V

• Access time: 120 ns max

• Power dissipation:

 Active: 20 mW/MHz, (typ)

 Standby: 110 µW (max)

• On-chip latches: address, data, CE, OE, WE

• Automatic byte write: 10 ms max

• Automatic page write (64 bytes): 10 ms max

• Ready/Busy (only the HN58V257A series)

• Data polling and Toggle bit

• Data protection circuit on power on/off

• Conforms to JEDEC byte-wide standard

• Reliable CMOS with MNOS cell technology

• 105 erase/write cycles (in page mode)

• 10 years data retention

• Software data protection

• Write protection by RES pin (only the HN58V257A series)

• Industrial versions (Temperature range: −20 to 85°C and −40 to 85°C) are also available.

• There are free also lead free products.

Rev.5.00, Nov. 17.2003, page 1 of 22

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