TYN840 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
TYN840 Datasheet PDF : 6 Pages
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TYNx40 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
IGT
VD = 12 V
VGT
RL = 33 Ω
MIN.
MAX.
MAX.
VGD VD = VDRM RL = 3.3 kΩ
Tj = 125°C MIN.
IH IT = 500 mA Gate open
MAX.
IL
IG = 1.2 x IGT
MAX.
dV/dt VD = 67 % VDRM Gate open
Tj = 125°C MIN.
VTM ITM = 80 A tp = 380 µs
Tj = 25°C
MAX.
Vt0 Threshold voltage
Tj = 125°C MAX.
Rd Dynamic resistance
Tj = 125°C MAX.
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
Tj = 125°C
MAX.
Table 5: Thermal resistance
Symbol
Rth(j-c) Junction to case (DC)
Rth(j-a) Junction to ambient (DC)
Parameter
Value
3.5
35
1.3
0.2
75
150
1000
1.6
0.85
10
5
4
Unit
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
Value
0.8
60
Unit
°C/W
°C/W
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
P(W)
40
α = 180°
35
30
25
20
15
10
5
0
0
5
IT(AV)(A)
10
15
20
360°
α
25
30
IT(AV)(A)
50
40
30
20
10
0
0
25
D.C.
α = 180°
Tcase(°C)
50
75
100
125
2/6
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