DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HMC286E Ver la hoja de datos (PDF) - Hittite Microwave

Número de pieza
componentes Descripción
Fabricante
HMC286E
Hittite
Hittite Microwave Hittite
HMC286E Datasheet PDF : 6 Pages
1 2 3 4 5 6
v03.0410
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 6.35 mW/°C above 85 °C)
Thermal Resistance
(channel to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+7 Vdc
0 dBm
150 °C
0.413 W
157 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
HMC286 / 286E
GaAs MMIC LOW NOISE
AMPLIFIER, 2.3 - 2.5 GHz
7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC286
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC286E
RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H286
XXXX
286E
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
7 - 13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]