HMC-ALH509(V03) Ver la hoja de datos (PDF) - Hittite Microwave
Número de pieza
componentes Descripción
Fabricante
HMC-ALH509 Datasheet PDF : 6 Pages
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v03.0209
HMC-ALH509
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled and matched to
50 Ohms.
1
Interface Schematic
2
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
3
RFOUT
This pad is AC coupled and matched to
50 Ohms.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
4
Vgg
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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