v02.0209
HMC-ALH508
GaAs HEMT LOW NOISE
AMPLIFIER, 71 - 86 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled
and matched to 50 Ohms.
1
Interface Schematic
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. See assembly for
required external components.
5
6-8
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Vgg1, Vgg2, Vgg3
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1-4