HMC-ALH508 Ver la hoja de datos (PDF) - Hittite Microwave

Número de pieza

componentes Descripción

Fabricante

HMC-ALH508

GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz

Hittite Microwave 

v02.0209

1

Absolute Maximum Ratings

Drain Bias Voltage

Gate Bias Voltage

RF Input Power

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

+3 Vdc

-1 to +0.3 Vdc

-5 dBm

195.6 °C/W

-65 to +150 °C

-55 to +85 °C

Outline Drawing

HMC-ALH508

GaAs HEMT LOW NOISE

AMPLIFIER, 71 - 86 GHz

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Die Packaging Information [1]

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

1-3

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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