HMC-ALH445(V03) Ver la hoja de datos (PDF) - Hittite Microwave

Número de pieza

componentes Descripción

Fabricante

HMC-ALH445
(Rev.:V03)

GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz

Hittite Microwave 

v03.0410

1

On-Wafer P1dB vs. Frequency

Outline Drawing

HMC-ALH445

GaAs HEMT MMIC LOW NOISE

AMPLIFIER, 18 - 40 GHz

Absolute Maximum Ratings

Drain Bias Voltage

Drain Bias Current

RF Input Power

Thermal Resistance

(channel to die bottom)

Channel Temperature

Storage Temperature

Operating Temperature

+5.5 Vdc

60 mA

10 dBm

201.2 °C/W

180 °C

-65 to +150 °C

-55 to +85 °C

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

1 - 194

Die Packaging Information [1]

Standard

Alternate

GP-1 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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