HM5116405 Ver la hoja de datos (PDF) - Elpida Memory, Inc
Número de pieza
componentes Descripción
Fabricante
HM5116405 Datasheet PDF : 34 Pages
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HM5116405 Series, HM5117405 Series
DC Characteristics
(Ta = 0 to +70˚C, VCC = 5 V ± 10%, VSS = 0 V) (HM5116405 Series)
HM5116405
-5
-6
-7
Parameter
Operating current*1, *2
Standby current
Symbol Min Max Min Max Min Max Unit
I CC1
— 90 — 80 — 70 mA
I CC2
— 2 — 2 — 2 mA
Test conditions
tRC = min
TTL interface
RAS, CAS = VIH
Dout = High-Z
— 1 — 1 — 1 mA
CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
Standby current
(L-version)
I CC2
— 150 — 150 — 150 µA
CMOS interface
RAS, CAS ≥ VCC – 0.2 V
Dout = High-Z
RAS-only refresh current*2 ICC3
Standby current*1
I CC5
— 90 — 80 — 70 mA
— 5 — 5 — 5 mA
tRC = min
RAS = VIH
CAS = VIL
Dout = enable
CAS-before-RAS refresh
I CC6
current
— 90 — 80 — 70 mA
tRC = min
EDO page mode current*1, *3 ICC7
Battery backup current
I CC10
Input leakage current
I LI
Output leakage current
I LO
— 80 — 70 — 65 mA
— 350 — 350 — 350 µA
–10 10 –10 10 –10 10 µA
–10 10 –10 10 –10 10 µA
tHPC = min
CMOS interface
Dout = High-Z, CBR
refresh: tRC = 31.3 µs
tRAS ≤ 0.3 µs
0 V ≤ Vin ≤ 7 V
0 V ≤ Vin ≤ 7 V
Dout = disable
Output high voltage
VOH
2.4 VCC 2.4 VCC 2.4 VCC V
High Iout = –2 mA
Output low voltage
VOL
0 0.4 0 0.4 0 0.4 V
Low Iout = 2 mA
Notes : 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
Data Sheet E0151H10
8
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