MURS160 Ver la hoja de datos (PDF) - LiteOn Technology
Número de pieza
componentes Descripción
Fabricante
MURS160 Datasheet PDF : 2 Pages
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LITE ON POWER
SEMICONDUCTOR
MURS140 thru MURS160
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE - 400 to 200 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
Glass passivated chip
SMB
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
SMB
Low reverse leakage current
Plastic material has UL flammability classification
94V-0
Y MECHANICAL DATA
R Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
A Marking : U1GB , U1JB
A
DIM. MIN. MAX.
A
4.06 4.57
B
3.30 3.94
B
C
C
1.96 2.21
D
0.15 0.31
E
5.21 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.62
H
0.76 1.52
All Dimensions in millimeter
IN MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
IM Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
L CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
E Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
R Rectified Current
@TL =135 C
Peak Forward Surge Current
P 8.3ms single half sine-wave
VRRM
VRMS
VDC
I(AV)
IFSM
MURS140
400
280
400
1.0
35
MURS160
600
420
600
UNIT
V
V
V
A
A
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 1.0A DC
VF
1.25
V
Maximum DC Reverse Current
@TJ =25 C
IR
at Rated DC Blocking Voltage
@TJ =150 C
5.0
150
uA
Maximum Reverse Recovery Time (Note 1)
TRR
50
ns
Typical Junction Capacitance Note 2)
CJ
10
pF
Typical Thermal Resistance (Note 3)
R0JL
15
C/W
Operating Temperature Range
TJ
-55 to +150
C
Storage Temperature Range
TSTG
NOTES : 1. Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance junction to Lead.
-55 to +175
C
REV. PRE, 24-May-2000
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