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Fabricante

HITK0302MPTL-HQ

30V, 2.7A, 115mΩmax. Silicon N Channel MOS FET Power Switching

Renesas Electronics 

HITK0302MP

Preliminary

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max Unit

Test conditions

Drain to source breakdown voltage V(BR)DSS 30

—

—

V

ID = 10 mA, VGS = 0

Gate to source breakdown voltage V(BR)GSS 20

—

—

V

IG = 100 A, VDS = 0

Gate to source leak current

IGSS

—

—

10

A VGS = 16 V, VDS = 0

Drain to source leak current

IDSS

—

—

1

A VDS = 30 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

—

2.0

V

VDS = 10 V, ID = 1 mA

Drain to source on state resistance RDS(on)

—

92

115

m ID = 1.3 A, VGS = 10 VNote3

RDS(on)

—

122

171

m ID = 1.3 A, VGS = 4.5 VNote3

Forward transfer admittance

|yfs|

2.1

3.5

—

S

ID = 1.3 A, VDS = 10 VNote3

Input capacitance

Ciss

—

175

—

pF VDS = 10 V, VGS = 0,

Output capacitance

Coss

—

34

—

pF f = 1 MHz

Reverse transfer capacitance

Crss

—

15

—

pF

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Total gate charge

Gate to source charge

td(on)

—

9.5

—

tr

—

37

—

ns ID = 1 A, VGS = 10 V,

ns RL = 10 , Rg = 4.7 

td(off)

—

38

—

ns

tf

—

8.2

—

ns

Qg

—

3.3

—

nC VDD = 10 V, VGS = 10 V,

Qgs

—

0.6

—

nC ID = 2.7A

Gate to drain charge

Qgd

—

0.5

—

nC

Body - drain diode forward voltage

VDF

—

0.9

—

V

IF = 1.5 A, VGS = 0 Note3

Notes: 3. Pulse test

R07DS0483EJ0200 Rev.2.00

May 09, 2013

Page 2 of 6

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