INA-12063-BLK Ver la hoja de datos (PDF) - HP => Agilent Technologies

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Fabricante

INA-12063-BLK

1.5 GHz Low Noise Self-Biased Transistor Amplifier

HP => Agilent Technologies 

INA-12063 Absolute Maximum Ratings

Symbol

Vd

Vc

Ic

Pin

Tj

TSTG

Parameter

Supply Voltage, to Ground

Collector Voltage

Collector Current

CW RF Input Power

Junction Temperature

Storage Temperature

Units

V

V

mA

dBm

°C

°C

Absolute

Maximum[1]

7

7

15

13

150

-65 to 150

Thermal Resistance[2]:

θj-c= 170°C/W

Notes:

1. Operation of this device above any

one of these limits may cause

permanent damage.

2. TC = 25°C (TC is defined to be the

temperature at the package pins

where contact is made to the

circuit board).

Electrical Specifications, TC = 25°C, Vd = 3 V, unless noted

Symbol

Parameters and Test Conditions

Units Min. Typ. Max. Std.Dev.[3]

GP Power Gain (|S21| 2)

f = 900 MHz[1] dB 14.5 16

0.36

f = 250 MHz[2]

19

NF Noise Figure

f = 900 MHz[1] dB

f = 250 MHz[2]

2.0 2.6

0.2

5.0

P1dB Output Power at 1 dB Gain Compression f = 900 MHz[1] dBm

0

f = 250 MHz[2]

-7

IP3 Third Order Intercept Point

f = 900 MHz[1] dBm

15

f = 250 MHz[2]

2

Idd Device Current[4]

900 MHz LNA[1] mA

250 MHz IF Amp[2]

5

7

0.6

1.5

Notes:

1. See Test Circuit in Figure 32.

2. See Test Circuit in Figure 33.

3. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during

the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical

specification.

4. Idd is the total current into Pins 1, 4, and 6 of the device, i.e. Idd = Ic + Ibias + Id.

6-117

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