HGT1S12N60A4S9A Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
HGT1S12N60A4S9A Datasheet PDF : 8 Pages
| |||
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG12N60A4, HGTP12N60A4,
HGT1S12N60A4S9A
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
600
54
23
96
±20
±30
60A at 600V
167
1.33
-55 to 150
300
260
UNITS
V
A
A
A
V
V
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications TJ = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
BVECS
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
IC = -10mA, VGE = 0V
VCE = 600V
TJ = 25oC
TJ = 125oC
IC = 12A,
VGE = 15V
TJ = 25oC
TJ = 125oC
IC = 250µA, VCE = 600V
VGE = ±20V
TJ = 150oC, RG = 10Ω, VGE = 15V
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 12A, VCE = 300V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 12A,
VCE = 300V
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = 12A
VCE = 390V
VGE =15V
RG = 10Ω
L = 500µH
Test Circuit (Figure 20)
MIN
TYP
MAX UNITS
600
-
-
V
20
-
-
V
-
-
250
µA
-
-
2.0
mA
-
2.0
2.7
V
-
1.6
2.0
V
-
5.6
-
V
-
-
±250
nA
60
-
-
A
-
8
-
V
-
78
96
nC
-
97
120
nC
-
17
-
ns
-
8
-
ns
-
96
-
ns
-
18
-
ns
-
55
-
µJ
-
160
-
µJ
-
50
-
µJ
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2
Share Link: 