HGT1S7N60A4S9A(2003) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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HGT1S7N60A4S9A Datasheet PDF : 8 Pages
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HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 2)
td(ON)I
trI
td(OFF)I
tfI
EON1
IGBT and Diode at TJ = 125oC
ICE = 7A
VCE = 390V
VGE = 15V
RG = 25Ω
L = 1mH
Test Circuit (Figure 20)
-
10
-
ns
-
7
-
ns
-
130
150
ns
-
75
85
ns
-
50
-
µJ
Turn-On Energy (Note 2)
EON2
-
200
215
µJ
Turn-Off Energy (Note 3)
Thermal Resistance Junction To Case
EOFF
RθJC
-
125
170
µJ
-
-
1.0
oC/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
35
VGE = 15V
40
TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
30
30
25
20
20
15
10
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
TC VGE
75oC 15V
200
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.0oC/W, SEE NOTES
TJ = 125oC, RG = 25Ω, L = 2mH, VCE = 390V
30
1
5
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16
VCE = 390V, RG = 25Ω, TJ = 125oC
140
14
120
12
ISC
100
10
80
8
60
6
tSC
40
4
20
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2003 Fairchild Semiconductor Corporation
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4 Rev. B1
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