FT0409MH Ver la hoja de datos (PDF) - Formosa Technology
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FT0409MH Datasheet PDF : 4 Pages
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FT04...H
LOGIC LEVEL TRIAC
Electrical Characteristics
SYMBOL
PARAMETER
CONDITIONS
Quadrant
SENSITIVITY Unit
04 05 07 08 09
IGT (1)
Gate Trigger Current
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC Q1÷Q3 MAX 5 5
VD = VDRM ,
Q4 MAX 5
IDRM /IRRM Off-State Leakage Current VR = VRRM ,
Tj = 125 ºC
MAX
Tj = 25 ºC
MAX
5 10 10 mA
7
10 mA
1
mA
5
µA
Vto(2)
Threshold Voltage
Tj = 125 ºC
MAX
0.9
V
Rd(2)
VTM(2)
VGT
VGD
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Tj = 125 ºC
MAX
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC
MAX
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC Q1÷Q4(3) MAX
VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC Q1÷Q4(3) MIN
120
mΩ
1.6
V
1.3
V
0.2
V
IH (2)
Holding Current
IT = 100 mA , Gate open, Tj = 25 ºC
MAX 15 15 10 15 20 mA
IL
Latching Current
IG = 1.2 IGT, Tj = 25 ºC
Q1,Q3,Q4(4) MAX 10 10 10 25 20 mA
Q2 MAX 20 20 15 30 40
dv / dt (2) Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open
Tj = 125 ºC
MIN 10 10 20 40 20 V/µs
(di/dt)c (2) Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs
(dv/dt)c= 10 V/µs
without snubber
Rth(j-c)
Thermal Resistance
Junction-Case
Rth(j-a)
Thermal Resistance
Junction-Ambient
Tj = 125 ºC
Tj = 125 ºC
Tj = 125 ºC
MIN 1.5 1.5 1.8 2.7 2.5 A/ms
MIN - - 0.9 2.0 -
MIN - - - - -
2.6
ºC/W
60
ºC/W
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
(3) Q4 for 4 Quadrant Triacs
Q3 for 3 Quadrant Triacs
(4) Only for 4 Quadrant Triacs
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
F T 04
08 B H 00 TU
PACKAGING
FORMING
CASE
VOLTAGE
SENSITIVITY
Dec - 02
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