MMBT4401 Ver la hoja de datos (PDF) - ZOWIE Technology

Número de pieza

componentes Descripción

Fabricante

MMBT4401

Switching Transistor NPN Silicon

ZOWIE Technology 

Zowie Technology Corporation

Switching Transistor

NPN Silicon

MMBT4401

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

3

1

2

SOT-23

Symbol

VCEO

VCBO

VEBO

IC

COLLECTOR

3

BASE

1

2

EMITTER

Value

40

60

6.0

600

Unit

Vdc

Vdc

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR-5 Board(1) TA=25oC

Derate above 25oC

Thermal Resistance Junction to Ambient

Total Device Dissipation Alumina Substrate,(2) TA=25oC

Derate above 25oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

Symbol

PD

R JA

PD

R JA

TJ,TSTG

Max.

225

1.8

556

300

2.4

417

-55 to +150

Unit

mW

mW / oC

oC / W

mW

mW / oC

oC / W

oC

DEVICE MARKING

MMBT4401=2X

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

Characteristic

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdowe Voltage(3)

( IC=1.0mAdc, IB=0 )

V(BR)CEO

40

-

Vdc

Collector-Base Breakdowe Voltage

( IC=0.1 mAdc, IE=0 )

Emitter-Base Breakdowe Voltage

( IE=0.1 mAdc, IC=0 )

Base Cutoff Current

( VCE=35 Vdc, VEB=0.4 Vdc )

Collector Cutoff Current

( VCE=35 Vdc, VEB=0.4 Vdc )

V(BR)CBO

60

V(BR)EBO

6.0

IBEV

-

ICEX

-

-

Vdc

-

Vdc

0.1

nAdc

0.1

nAdc

REV. : 0

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