2N2906 Ver la hoja de datos (PDF) - Philips Electronics
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2N2906 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistors
Product specification
2N2906; 2N2906A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
ICBO
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
2N2906
collector cut-off current
2N2906A
emitter cut-off current
DC current gain
2N2906
DC current gain
2N2906A
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IE = 0; VCB = −50 V
IE = 0; VCB = −50 V; Tamb = 150 °C
IE = 0; VCB = −50 V
IE = 0; VCB = −50 V; Tamb = 150 °C
IC = 0; VEB = −5 V
VCE = −10 V
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −150 mA; note 1
IC = −500 mA; note 1
VCE = −10 V
IC = −0.1 mA
IC = −1 mA
IC = −10 mA
IC = −150 mA; note 1
IC = −500 mA; note 1
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IC = −150 mA; IB = −15 mA; note 1
IC = −500 mA; IB = −50 mA; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −2 V; f = 1 MHz
IC = −50 mA; VCE = −20 V; f = 100 MHz;
note 1
−
−20 nA
−
−20 µA
−
−10 nA
−
−10 µA
−
−50 nA
20 −
25 −
35 −
40 120
20
−
40 −
40 −
40 −
40 120
40 −
−400 mV
−1.6 V
−1.3 V
−2.6 V
−
8
pF
−
30 pF
200 −
MHz
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA −
−
−
−
−
−
45 ns
15 ns
35 ns
300 ns
250 ns
50 ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 Jun 02
4
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