HCF4006BM1 Ver la hoja de datos (PDF) - STMicroelectronics
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HCF4006BM1 Datasheet PDF : 11 Pages
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HCC/HCF4006B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall times = 20ns)
Symbol
Parameter
tP L H, tP HL Propagation Delay Time
Test Conditions
V al ue
V D D (V) Min. Typ. Max.
5
200
10
100
Unit
ns
15
80
t THL , tT L H Transition Time
5
100
10
50
ns
15
40
tw
Clock Pulse Width
5
100
10
45
ns
15
30
tr, tf Clock Input Rise or Fall Time*
5
15
10
15
µs
15
15
t se tu p Data Setup Time
5
50
10
25
ns
15
20
fmax Maximum Clock Input Frequency
5
5
10
12
MHz
15
16
* If more than unit is cascaded trCL should be made less than or equal to the sum of the transition time and the fixed propagation delay of the
output of the driving stage for the estimated capacitive load.
Typical Output Low (sink) Current Characteristics.
Minimum Output Low (sink) Current Charac-
teristics.
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