BSX20 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BSX20 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN switching transistor
Product specification
BSX20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
t ≤ 10 µs
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
40
15
4.5
200
300
100
360
+150
200
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
VALUE
480
150
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
collector cut-off current
IE = 0; VCB = 20 V
−
−
400 nA
IE = 0; VCB = 20 V; Tj = 150 °C
−
−
30 µA
emitter cut-off current
IC = 0; VEB = 4 V
−
−
100 nA
DC current gain
IC = 10 mA; VCE = 1 V
40 −
120
IC = 10 mA; VCE = 1 V; Tj = −55 °C 20
−
−
IC = 100 mA; VCE = 2 V
20 −
−
collector-emitter saturation voltage IC = 10 mA; IB = 0.3 mA
−
−
300 mV
IC = 10 mA; IB = 1 mA
−
−
250 mV
IC = 100 mA; IB = 10 mA
−
−
600 mV
base-emitter saturation voltage IC = 10 mA; IB = 1 mA
700 −
850 mV
IC = 100 mA; IB = 10 mA
−
−
1.5 V
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
−
4
pF
emitter capacitance
IC = ic = 0; VEB = 1 V; f = 1 MHz
−
−
4.5 pF
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 500 600 −
MHz
1997 May 14
3
Share Link: 