BSX20 Ver la hoja de datos (PDF) - Philips Electronics
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BSX20 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
BSX20
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed saturated switching (and HF amplifier
applications).
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
3
2
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
fT
transition frequency
toff
turn-off time
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
IC = 10 mA; VCE = 1 V
IC = 100 mA; VCE = 2 V
IC = 10 mA; VCE = 10 V; f = 100 MHz
ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA
MIN.
−
−
−
−
40
20
500
−
MAX.
40
15
200
360
120
−
−
30
UNIT
V
V
mA
mW
MHz
ns
1997 May 14
2
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