HBN2411S6R Ver la hoja de datos (PDF) - Cystech Electonics Corp.

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HBN2411S6R

General Purpose NPN Epitaxial Planar Transistors (dual transistors)

Cystech Electonics Corp. 

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistors

(dual transistors)

HBN2411S6R

Spec. No. : C203S6R

Issued Date : 2003.09.12

Revised Date : 2005.03.30

Page No. : 1/ 5

Features

• Two BTC2411chips in a SOT-363 package.

• Mounting possible with SOT-323 automatic mounting machines.

• Transistor elements are independent, eliminating interference.

• Mounting cost and area can be cut in half.

• High IC(Max) . IC (Max) = 0.6A

• Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA

Optimal for low Voltage operation

• Complementary to HBP1036S6R

Equivalent Circuit

Outline

HBN2411S6R

SOT-363R

Tr1

Tr2

The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

Pd

Tj

Tstg

Limits

Unit

60

V

40

V

6

V

0.6

A

200(total) (Note)

mW

150

°C

-55~+150

°C

Note : 150mW per element must not be exceeded.

HBN2411S6R

CYStek Product Specification

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