HAT1029R Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
HAT1029R Datasheet PDF : 10 Pages
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Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
–0.4
–0.3
–0.2
I D = –2 A
–0.1
–1 A
–0.5 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
HAT1029R
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.2
VGS = –2.5 V
0.1
–4 V
0.05
0.02
0.01
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
0.4
I D = –2 A
0.3
–1 A –0.5 A
0.2 VGS = –2.5 V
0.1
–2 A, –1 A, –0.5 A
–4 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
2
25 °C
1
75 °C
0.5
0.2
–0.1 –0.2 –0.5 –1
Drain Current
V DS = –10 V
Pulse Test
–2 –5 –10
I D (A)
5
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