HAT1029R Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HAT1029R

Silicon P Channel Power MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

HAT1029R

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

–20

V

Gate to source voltage

VGSS

±10

V

Drain current

ID

–3.5

A

Drain peak current

I Note1

D(pulse)

–28

A

Body–drain diode reverse drain current IDR

–3.5

A

Channel dissipation

Pch Note2

2

W

Channel dissipation

Pch Note3

3

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW ≤ 10µs, duty cycle ≤ 1 %

2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s

2

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