HAT1029R Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HAT1029R

Silicon P Channel Power MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

HAT1029R

Silicon P Channel Power MOS FET

High Speed Power Switching

Features

• Low on-resistance

• Capable of 2.5 V gate drive

• Low drive current

• High density mounting

Outline

ADE-208-522 (Z)

1st. Edition

May 1997

SOP–8

78

DD

8 7 65

1 234

56

DD

2

4

G

G

S1

MOS1

S3

MOS2

1, 3

Source

2, 4

Gate

5, 6, 7, 8 Drain

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