HAT1024R Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HAT1024R

Silicon P Channel Power MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

HAT1024R

Main Characteristics

Power vs. Temperature Derating

4.0

Test Condition :

When using the glass epoxy board

(FR4 40x40x1.6 mm), PW < 10 s

3.0

2.0

1.0

1 Drive Operation

0

50

100

150

200

Ambient Temperature Ta (°C)

Maximum Safe Operation Area

–100

–30

–10

–3

–1

–0.3

–0.1

10 µs

OtlihmpisietearadretiboaynisRDinCDOSp(eornat)ioPnW(PW= 11<0N11mo0m0t0sessµ5)s

Ta = 25 °C

–0.03 1 shot Pulse

–0.01 1 Drive Operation

–0.1 –0.3 –1 –3

–10 –30 –100

Drain to Source Voltage V DS (V)

Note 5 :

When using the glass epoxy board

(FR4 40x40x1.6 mm)

Typical Output Characteristics

–20

–10 V –8 V

–6 V

Pulse Test

–16

–5 V

–12

–4.5 V

–8

–4 V

–3.5 V

–4

–3 V

VGS = –2.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–20

Tc = –25 °C

–16

25 °C

–12

75 °C

–8

–4

V DS = –10 V

Pulse Test

0

–2 –4 –6 –8 –10

Gate to Source Voltage V GS (V)

4

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