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Número de pieza
componentes Descripción
HAT1020 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
HAT1020
Silicon P Channel Power MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
HAT1020 Datasheet PDF : 10 Pages
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HAT1020R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
I
D
= –5 A
–0.2
–0.1
–2 A
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
V
GS
= –4 V
0.05
–10 V
0.02
0.01
–0.2
–0.5 –1 –2 –5 –10 –20
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
V
GS
= –4 V
0.08
I
D
= –5 A
–2 A, –1 A
0.04
0
–40
–10 V
–5 A, –2 A, –1 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
5
75 °C
2
25 °C
1
0.5
0.2
–0.2
V
DS
= –10 V
Pulse Test
–0.5 –1 –2 –5 –10 –20
Drain Current I
D
(A)
4
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